SIE854 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 60A 10POLARPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 100 V | N-Channel | Surface Mount | 75 nC | 10 V | 14.2 mOhm | 10-PolarPAK® (L) | 3100 pF | 4.4 V | 10-PolarPAK® (L) | 60 A | 20 V | MOSFET (Metal Oxide) | 5.2 W 125 W |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 100 V | N-Channel | Surface Mount | 75 nC | 10 V | 14.2 mOhm | 10-PolarPAK® (L) | 3100 pF | 4.4 V | 10-PolarPAK® (L) | 60 A | 20 V | MOSFET (Metal Oxide) | 5.2 W 125 W |