Discrete Semiconductor Products

SIZ322DT-T1-GE3

LTB

MOSFET 2N-CH 25V 30A 8PWR33

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 25V 30A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ322DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	20.1 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	16.7 W
Rds On (Max) @ Id, Vgs	6.35 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SIZ322DT-T1-GE3	25 V	MOSFET (Metal Oxide)	6.35 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	8-PowerWDFN	Surface Mount	20.1 nC	950 pF	2.4 V	8-Power33 (3x3)	30 A	16.7 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Technical documentation and resources