SIZ322 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 25V 30A 8PWR33
| Part | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 25 V | MOSFET (Metal Oxide) | 6.35 mOhm | -55 °C | 150 °C | 2 N-Channel (Dual) | 8-PowerWDFN | Surface Mount | 20.1 nC | 950 pF | 2.4 V | 8-Power33 (3x3) | 30 A | 16.7 W |