Discrete Semiconductor Products

STN851-A

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BIPOLAR TRANSISTORS - BJT LOW VOLTAGE NPN POWER TRANSISTOR

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT LOW VOLTAGE NPN POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	STN851-A

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.6 W
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Part	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Transistor Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Frequency - Transition	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STN851-A	500 mV	Surface Mount	SOT-223	NPN	150 °C	60 V	1.6 W	130 MHz	TO-261-4 TO-261AA	50 nA	150	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured in planar technology with "Base Island" layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Technical documentation and resources