Discrete Semiconductor Products

RJP6085DPN-00#T2

Obsolete

INSULATED-GATE BIPOLAR TRANSISTORS (IGBT)

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Discrete Semiconductor Products

Obsolete

INSULATED-GATE BIPOLAR TRANSISTORS (IGBT)

Technical Specifications

Parameters and characteristics for this part

Specification	RJP6085DPN-00#T2

Current - Collector (Ic) (Max) [Max]	40 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	178.5 W
Supplier Device Package	TO-220AB
Vce(on) (Max) @ Vge, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Insulated-Gate Bipolar Transistors (IGBT)

Part	Operating Temperature	Mounting Type	Power - Max [Max]	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
Renesas Electronics Corporation RJP6085DPN-00#T2	150 °C	Through Hole	178.5 W	TO-220-3	TO-220AB	40 A	3.5 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.19

General part information

IGBT 600V 40A TO-220AB

Technical documentation and resources