RJP6085DPN-00 Series
Insulated-Gate Bipolar Transistors (IGBT)
Manufacturer: Renesas Electronics Corporation
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Insulated-Gate Bipolar Transistors (IGBT)
Description
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IGBT 600V 40A TO-220AB
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Insulated-Gate Bipolar Transistors (IGBT)
Insulated-Gate Bipolar Transistors (IGBT)
Insulated-Gate Bipolar Transistors (IGBT)
| Part | Operating Temperature | Mounting Type | Power - Max [Max] | Package / Case | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 150 °C | Through Hole | 178.5 W | TO-220-3 | TO-220AB | 40 A | 3.5 V | 600 V |