Discrete Semiconductor Products

FERD30L60CTS

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60 V, 30 A DUAL LOW VF FIELD-EFFECT RECTIFIER DIODE (FERD)

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Discrete Semiconductor Products

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60 V, 30 A DUAL LOW VF FIELD-EFFECT RECTIFIER DIODE (FERD)

Technical Specifications

Parameters and characteristics for this part

Specification	FERD30L60CTS

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	820 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-3
Speed	500 mA
Supplier Device Package	TO-220
Technology	FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	545 mV

60 V, 30 A dual Low Vf Field-Effect Rectifier Diode (FERD)

Part	Operating Temperature - Junction [Max]	Technology	Diode Configuration	Mounting Type	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
STMicroelectronics FERD30L60CTS	150 °C	FERD (Field Effect Rectifier Diode)	1 Pair Common Cathode	Through Hole	TO-220	15 A	820 µA	60 V	TO-220-3	500 mA	545 mV
STMicroelectronics FERD30L60CG-TR	150 °C	FERD (Field Effect Rectifier Diode)	1 Pair Common Cathode	Surface Mount	D2PAK	15 A	820 µA	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mA	545 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	944	$ 1.02

General part information

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.