Specification	MBRAF1540T3G

Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	800 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMA Flat Leads, DO-221AC
Speed	200 mA, 500 ns
Supplier Device Package	SMA-FL
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	460 mV

MBRAF1540 Series

1.5 A, 40 V Schottky Rectifier

Part	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MBRAF1540T3G	1.5 A	Schottky	40 V	DO-221AC SMA Flat Leads	800 µA	460 mV	SMA-FL	200 mA 500 ns	Surface Mount	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRAF1540 Series

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.