Discrete Semiconductor Products
BUK763R9-60E,118
ObsoleteNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Discrete Semiconductor Products
BUK763R9-60E,118
ObsoleteNexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK763R9-60E,118 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 263 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
| 687 | $ 0.00 | |||
Description
General part information
BUK763R9-60E Series
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Documents
Technical documentation and resources