N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET
| Part | FET Type | Supplier Device Package | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Qualification | Package / Case | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | D2PAK | 263 W | 103 nC | Surface Mount | 100 A | 20 V | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Automotive | 175 °C | -55 °C | 7480 pF | 3.9 mOhm | 10 V | MOSFET (Metal Oxide) | 60 V |