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SOT-223 (TO-261)
Discrete Semiconductor Products

MMJT9410T1G

Obsolete
ON Semiconductor

NPN BIPOLAR POWER TRANSISTOR

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SOT-223 (TO-261)
Discrete Semiconductor Products

MMJT9410T1G

Obsolete
ON Semiconductor

NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMMJT9410T1G
Current - Collector (Ic) (Max) [Max]3 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]85
Frequency - Transition72 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]3 W
Supplier Device PackageSOT-223 (TO-261)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic450 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MMJT9435 Series

PNP Silicon