MMJT9435 Series

PNP Bipolar Power Transistor

Catalog

PNP Bipolar Power Transistor

Part	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor MMJT9410T1	SOT-223 (TO-261)	450 mV	30 V	NPN	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	72 MHz	3 A	3 W	85
ON Semiconductor MMJT9435T3G	SOT-223 (TO-261)	550 mV	30 V	PNP	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	110 MHz	3 A	3 W	125
ON Semiconductor MMJT9410T1G	SOT-223 (TO-261)	450 mV	30 V	NPN	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	72 MHz	3 A	3 W	85
ON Semiconductor MMJT9435T3	SOT-223 (TO-261)	550 mV	30 V	PNP	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	110 MHz	3 A	3 W	125

PNP Bipolar Power Transistor

• Collector -Emitter Sustaining Voltage VCEO(sus)= 30 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain hFE= 125 (Min) @ IC= 0.8 Adc = 90 (Min) @ IC= 3.0 Adc

• Low Collector -Emitter Saturation Voltage VCE(sat)= 0.275 Vdc (Max) @ IC= 1.2 Adc = 0.55 Vdc (Max) @ IC= 3.0 Adc

• SOT-223 Surface Mount Packaging Schematic

• Pb-Free Packages are Available

PNP Silicon