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SSM6L56FE - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
Discrete Semiconductor Products

SSM6J212FE,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -4.0 A, 0.0407 Ω@4.5V, SOT-563(ES6)

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SSM6L56FE - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
Discrete Semiconductor Products

SSM6J212FE,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -4.0 A, 0.0407 Ω@4.5V, SOT-563(ES6)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM6J212FE,LF
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.1 nC
Input Capacitance (Ciss) (Max) @ Vds970 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-563, SOT-666
Power Dissipation (Max)500 mW
Rds On (Max) @ Id, Vgs40.7 mOhm
Supplier Device PackageES6
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.70
10$ 0.43
100$ 0.28
500$ 0.21
1000$ 0.19
2000$ 0.17
Digi-Reel® 1$ 0.70
10$ 0.43
100$ 0.28
500$ 0.21
1000$ 0.19
2000$ 0.17
N/A 0$ 0.55
Tape & Reel (TR) 4000$ 0.16
8000$ 0.14
12000$ 0.14
20000$ 0.13
28000$ 0.13
40000$ 0.13

Description

General part information

SSM6J212 Series

P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount ES6