SSM6J212 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -4.0 A, 0.0407 Ω@4.5V, SOT-563(ES6)
| Part | FET Type | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | P-Channel | ES6 | MOSFET (Metal Oxide) | 14.1 nC | 1 V | 20 V | 500 mW | 40.7 mOhm | SOT-563 SOT-666 | 970 pF | 1.5 V 4.5 V | 8 V | 150 °C | 4 A | Surface Mount |