Discrete Semiconductor Products
STP40NF03L
NRNDSTMicroelectronics
N-CHANNEL 30V - 0.020 OHM - 40A - TO-220 STRIPFET(TM) II MOSFET
Discrete Semiconductor Products
STP40NF03L
NRNDSTMicroelectronics
N-CHANNEL 30V - 0.020 OHM - 40A - TO-220 STRIPFET(TM) II MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP40NF03L |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs [Max] | 22 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 490 | $ 1.45 | |
Description
General part information
STP40NF03L Series
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.