Discrete Semiconductor Products

SI4646DY-T1-GE3

Obsolete

MOSFET N-CH 30V 12A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4646DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	6.25 W, 3 W
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI4646DY-T1-GE3	12 A	2.5 V	45 nC	8-SOIC	3.9 mm	0.154 in	20 V	4.5 V 10 V	8-SOIC	MOSFET (Metal Oxide)	11.5 mOhm	30 V	Surface Mount	3 W 6.25 W	1790 pF	-55 °C	150 °C	N-Channel
Vishay General Semiconductor - Diodes Division SI4646DY-T1-E3	12 A	2.5 V	45 nC	8-SOIC	3.9 mm	0.154 in	20 V	4.5 V 10 V	8-SOIC	MOSFET (Metal Oxide)	11.5 mOhm	30 V	Surface Mount	3 W 6.25 W	1790 pF	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 12A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

Technical documentation and resources