SI4646 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 12A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 12 A | 2.5 V | 45 nC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 4.5 V 10 V | 8-SOIC | MOSFET (Metal Oxide) | 11.5 mOhm | 30 V | Surface Mount | 3 W 6.25 W | 1790 pF | -55 °C | 150 °C | N-Channel |
Vishay General Semiconductor - Diodes Division | 12 A | 2.5 V | 45 nC | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 4.5 V 10 V | 8-SOIC | MOSFET (Metal Oxide) | 11.5 mOhm | 30 V | Surface Mount | 3 W 6.25 W | 1790 pF | -55 °C | 150 °C | N-Channel |