STP60NF10
ActiveN-CHANNEL 100V - 0.019OHM - 80A D2PAK/TO-220/I2PAK STRIPFET™ II POWER MOSFET
STP60NF10
ActiveN-CHANNEL 100V - 0.019OHM - 80A D2PAK/TO-220/I2PAK STRIPFET™ II POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP60NF10 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4270 pF |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 23 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 821 | $ 2.78 | |
Description
General part information
STP60NF10 Series
This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Documents
Technical documentation and resources