Discrete Semiconductor Products

SI6562CDQ-T1-GE3

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MOSFET N/P-CH 20V 6.7A 8TSSOP

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Discrete Semiconductor Products

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MOSFET N/P-CH 20V 6.7A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6562CDQ-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6.7 A, 6.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max	1.7 W, 1.6 W
Rds On (Max) @ Id, Vgs [Max]	22 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Drain to Source Voltage (Vdss)	Power - Max	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI6562CDQ-T1-GE3	1.5 V	Surface Mount	850 pF	N and P-Channel	22 mOhm	23 nC	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	8-TSSOP	6.1 A 6.7 A	-55 °C	150 °C	Logic Level Gate	20 V	1.6 W 1.7 W
Vishay General Semiconductor - Diodes Division SI6562DQ-T1-GE3	600 mV	Surface Mount		N and P-Channel			8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	8-TSSOP				Logic Level Gate	20 V		1 W	25 nC	30 mOhm

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General part information

Mosfet Array 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

Technical documentation and resources