SI6562 Series

Catalog

MOSFET N/P-CH 20V 6.7A 8TSSOP

Part	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Drain to Source Voltage (Vdss)	Power - Max	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI6562CDQ-T1-GE3	1.5 V	Surface Mount	850 pF	N and P-Channel	22 mOhm	23 nC	8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	8-TSSOP	6.1 A 6.7 A	-55 °C	150 °C	Logic Level Gate	20 V	1.6 W 1.7 W
Vishay General Semiconductor - Diodes Division SI6562DQ-T1-GE3	600 mV	Surface Mount		N and P-Channel			8-TSSOP	0.173 "	4.4 mm	MOSFET (Metal Oxide)	8-TSSOP				Logic Level Gate	20 V		1 W	25 nC	30 mOhm