CSD83325LT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL LGA, 5.9 MOHM, GATE ESD PROTECTION
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CSD83325LT
Active12-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL LGA, 5.9 MOHM, GATE ESD PROTECTION
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD83325LT |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.9 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-XFBGA |
| Power - Max [Max] | 2.3 W |
| Supplier Device Package | 6-PicoStar |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.23 | |
| 10 | $ 1.10 | |||
| 25 | $ 1.05 | |||
| 100 | $ 0.86 | |||
| Digi-Reel® | 1 | $ 1.23 | ||
| 10 | $ 1.10 | |||
| 25 | $ 1.05 | |||
| 100 | $ 0.86 | |||
| Tape & Reel (TR) | 250 | $ 0.80 | ||
| 500 | $ 0.71 | |||
| 1250 | $ 0.56 | |||
| 2500 | $ 0.52 | |||
| 6250 | $ 0.50 | |||
| 12500 | $ 0.48 | |||
| Texas Instruments | SMALL T&R | 1 | $ 1.06 | |
| 100 | $ 0.72 | |||
| 250 | $ 0.56 | |||
| 1000 | $ 0.37 | |||
Description
General part information
CSD83325L Series
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
Documents
Technical documentation and resources