Discrete Semiconductor Products

SIR850DP-T1-GE3

Obsolete

MOSFET N-CH 25V 30A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 30A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR850DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	4.8 W, 41.7 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIR850DP-T1-GE3	30 nC	3 V	20 V	PowerPAK® SO-8	Surface Mount	-55 °C	150 °C	4.8 W 41.7 W	4.5 V 10 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	1120 pF	30 A	25 V	N-Channel	7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources