SIR850 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 30A PPAK SO-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 nC | 3 V | 20 V | PowerPAK® SO-8 | Surface Mount | -55 °C | 150 °C | 4.8 W 41.7 W | 4.5 V 10 V | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 1120 pF | 30 A | 25 V | N-Channel | 7 mOhm |