Discrete Semiconductor Products

STF10LN80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

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DocumentsSTF10LN80K5 | Datasheet +17

Discrete Semiconductor Products

STF10LN80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsSTF10LN80K5 | Datasheet +17

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF10LN80K5

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	427 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STF10LN80K5 Series

N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Part	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STF10LN80K5	30 V	MOSFET (Metal Oxide)	10 V	15 nC	Through Hole	5 V	630 mOhm	25 W	800 V	TO-220FP	427 pF	150 °C	-55 °C	N-Channel	TO-220-3 Full Pack	8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	183	$ 3.51
Newark	Each	1	$ 4.15
		10	$ 4.10
		100	$ 2.41
		500	$ 2.10
		1000	$ 1.97
		3000	$ 1.93

Description

General part information

STF10LN80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.