Discrete Semiconductor Products

SIR892DP-T1-GE3

Obsolete

MOSFET N-CH 25V 50A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR892DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	50 W, 5 W
Rds On (Max) @ Id, Vgs [Max]	3.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR892DP-T1-GE3	MOSFET (Metal Oxide)	60 nC	20 V	PowerPAK® SO-8	4.5 V 10 V	5 W 50 W	2645 pF	50 A	25 V	Surface Mount	N-Channel	3.2 mOhm	-55 °C	150 °C	2.6 V	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 50A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources