SIR892 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 50A PPAK SO-8
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 60 nC | 20 V | PowerPAK® SO-8 | 4.5 V 10 V | 5 W 50 W | 2645 pF | 50 A | 25 V | Surface Mount | N-Channel | 3.2 mOhm | -55 °C | 150 °C | 2.6 V | PowerPAK® SO-8 |