Discrete Semiconductor Products

2SJ652-RA11

Obsolete

MOSFET P-CH 60V 28A TO220ML

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 28A TO220ML

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ652-RA11

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4360 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	TO-220ML
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Operating Temperature	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor 2SJ652-RA11	38 mOhm	80 nC	MOSFET (Metal Oxide)	28 A	P-Channel	4 V	10 V	60 V	TO-220ML	Through Hole	150 °C	20 V	TO-220-3 Full Pack	4360 pF
ON Semiconductor 2SJ652-1E	38 mOhm	80 nC	MOSFET (Metal Oxide)	28 A	P-Channel	4 V	10 V	60 V	TO-220F-3SG	Through Hole	150 °C	20 V	TO-220-3 Full Pack	4360 pF	2 W 30 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 28A (Ta) Through Hole TO-220ML

Technical documentation and resources

No documents available