2SJ652 Series

Catalog

MOSFET P-CH 60V 28A TO220ML

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Operating Temperature	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor 2SJ652-RA11	38 mOhm	80 nC	MOSFET (Metal Oxide)	28 A	P-Channel	4 V	10 V	60 V	TO-220ML	Through Hole	150 °C	20 V	TO-220-3 Full Pack	4360 pF
ON Semiconductor 2SJ652-1E	38 mOhm	80 nC	MOSFET (Metal Oxide)	28 A	P-Channel	4 V	10 V	60 V	TO-220F-3SG	Through Hole	150 °C	20 V	TO-220-3 Full Pack	4360 pF	2 W 30 W