VN2110K1-G
ActiveTRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 200MA; IDM: 0.8A; 360MW
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VN2110K1-G
ActiveTRANSISTOR: N-MOSFET; UNIPOLAR; 100V; 200MA; IDM: 0.8A; 360MW
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VN2110K1-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 360 mW |
| Rds On (Max) @ Id, Vgs [Max] | 4 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.64 | |
| 25 | $ 0.54 | |||
| 100 | $ 0.49 | |||
| Digi-Reel® | 1 | $ 0.64 | ||
| 25 | $ 0.54 | |||
| 100 | $ 0.49 | |||
| Tape & Reel (TR) | 3000 | $ 0.49 | ||
| Microchip Direct | T/R | 1 | $ 0.64 | |
| 25 | $ 0.54 | |||
| 100 | $ 0.49 | |||
| 1000 | $ 0.41 | |||
| 5000 | $ 0.37 | |||
| 10000 | $ 0.35 | |||
| TME | N/A | 1 | $ 0.78 | |
| 5 | $ 0.52 | |||
| 25 | $ 0.48 | |||
| 100 | $ 0.41 | |||
Description
General part information
VN2110 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources