Integrated Circuits (ICs)

L6387

Obsolete

IC GATE DRVR HALF-BRIDG 8MINIDIP

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Integrated Circuits (ICs)

Obsolete

IC GATE DRVR HALF-BRIDG 8MINIDIP

Technical Specifications

Parameters and characteristics for this part

Specification	L6387

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	400 mA
Current - Peak Output (Source, Sink) [custom]	650 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [custom]	1.5 V
Logic Voltage - VIL, VIH [custom]	3.6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-45 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ)	50 ns, 30 ns
Supplier Device Package	8-Mini DIP
Voltage - Supply	17 V

Part	Gate Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ)	Voltage - Supply	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Package / Case	Supplier Device Package	Package / Case	Package / Case
STMicroelectronics L6387	IGBT MOSFET (N-Channel) N-Channel MOSFET	Through Hole	-45 °C	125 ¯C	30 ns 50 ns	17 V	1.5 V	3.6 V	Independent	400 mA	650 mA	2	Inverting	600 V	Half-Bridge	8-DIP (0.300" 7.62mm)	8-Mini DIP
STMicroelectronics L6387ED	IGBT MOSFET (N-Channel)	Surface Mount	-45 °C	125 ¯C	30 ns 50 ns	17 V	1.5 V	3.6 V	Independent	400 mA	650 mA	2	Inverting	600 V	Half-Bridge	8-SOIC	8-SOIC	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Inverting 8-Mini DIP

Technical documentation and resources