Discrete Semiconductor Products

SIHB105N60EF-GE3

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MOSFET N-CH 600V 29A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 600V 29A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB105N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1804 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	102 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	FET Type
Vishay General Semiconductor - Diodes Division SIHB105N60EF-GE3	30 V	53 nC	5 V	1804 pF	29 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	102 mOhm	600 V	10 V	Surface Mount	208 W	TO-263 (D2PAK)	N-Channel

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General part information

N-Channel 600 V 29A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources