SIHB105 Series

Catalog

MOSFET N-CH 600V 29A D2PAK

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Supplier Device Package	FET Type
Vishay General Semiconductor - Diodes Division SIHB105N60EF-GE3	30 V	53 nC	5 V	1804 pF	29 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	102 mOhm	600 V	10 V	Surface Mount	208 W	TO-263 (D2PAK)	N-Channel