Discrete Semiconductor Products

STW34N65M5

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TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	STW34N65M5

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW34N65M5	110 mOhm	5 V	Through Hole	190 W	62.5 nC	650 V	MOSFET (Metal Oxide)	28 A	TO-247-3	25 V	2700 pF	150 °C	TO-247-3	N-Channel	10 V
STMicroelectronics STW34NM60N	105 mOhm	4 V	Through Hole	250 W		600 V	MOSFET (Metal Oxide)	29 A	TO-247-3	25 V		150 °C	TO-247-3	N-Channel	10 V	2722 pF	80 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 28A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources