Discrete Semiconductor Products

SIHJ6N65E-T1-GE3

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MOSFET N-CH 650V 5.6A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 650V 5.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHJ6N65E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	596 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	74 W
Rds On (Max) @ Id, Vgs	868 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type
Vishay General Semiconductor - Diodes Division SIHJ6N65E-T1-GE3	650 V	-55 °C	150 °C	30 V	32 nC	MOSFET (Metal Oxide)	PowerPAK® SO-8	5.6 A	10 V	74 W	PowerPAK® SO-8	868 mOhm	Surface Mount	596 pF	4 V	N-Channel

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General part information

N-Channel 650 V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources