SIHJ6 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 650V 5.6A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 650 V | -55 °C | 150 °C | 30 V | 32 nC | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 5.6 A | 10 V | 74 W | PowerPAK® SO-8 | 868 mOhm | Surface Mount | 596 pF | 4 V | N-Channel |