Specification	FDG316P

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDG316P Series

P-Channel Logic Level PowerTrench® MOSFET -30 V, -1.6 A, 190 mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDG316P	165 pF	3 V	750 mW	Surface Mount	30 V	P-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	190 mOhm	SC-88 (SC-70-6)	4.5 V 10 V	1.6 A	6-TSSOP SC-88 SOT-363	5 nC
ON Semiconductor FDG316P	165 pF	3 V	750 mW	Surface Mount	30 V	P-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	190 mOhm	SC-88 (SC-70-6)	4.5 V 10 V	1.6 A	6-TSSOP SC-88 SOT-363	5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1466	$ 0.20
		1466	$ 0.20

Description

General part information

FDG316P Series

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.