FDG316P Series

P-Channel Logic Level PowerTrench® MOSFET -30 V, -1.6 A, 190 mΩ

Catalog

P-Channel Logic Level PowerTrench® MOSFET -30 V, -1.6 A, 190 mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDG316P	165 pF	3 V	750 mW	Surface Mount	30 V	P-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	190 mOhm	SC-88 (SC-70-6)	4.5 V 10 V	1.6 A	6-TSSOP SC-88 SOT-363	5 nC
ON Semiconductor FDG316P	165 pF	3 V	750 mW	Surface Mount	30 V	P-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	190 mOhm	SC-88 (SC-70-6)	4.5 V 10 V	1.6 A	6-TSSOP SC-88 SOT-363	5 nC

Catalog

P-Channel Logic Level PowerTrench® MOSFET -30 V, -1.6 A, 190 mΩ

Key Features

-1.6 A, -30 A V

• RDS(on)= 0.19 Ω @ VGS= -10 V

• RDS(on)= 0.30 Ω @ VGS= -4.5 V.

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely lowRDS(ON).

• Compact industry standard SC70-6 surface mountpackage.

Description

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.