Discrete Semiconductor Products

SIR798DP-T1-GE3

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR798DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	130 nC
Input Capacitance (Ciss) (Max)	5050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Rds On (Max)	2.05 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Package Name	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	FET Type	Package / Case	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Feature
Vishay Dale SIR798DP-T1-GE3	130 nC	PowerPAK® SO-8	83 W	MOSFET (Metal Oxide)	-55 °C	150 °C	2.05 mOhm	5050 pF	30 V	Surface Mount	20 V	2.5 V	N-Channel	PowerPAK® SO-8	60 A	10 V	4.5 V	Schottky Diode (Body)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 60A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources