SIR798 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 60A PPAK SO-8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Supplier Device Package | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | Surface Mount | 2.05 mOhm | PowerPAK® SO-8 | 2.5 V | N-Channel | 83 W | PowerPAK® SO-8 | Schottky Diode (Body) | 130 nC | 60 A | 5050 pF | 30 V | 20 V |