Discrete Semiconductor Products

IRF9640STRR

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 200V 11A D2PAK

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Discrete Semiconductor Products

IRF9640STRR

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 200V 11A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9640STRR

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3 W, 125 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF9640 Series

Part	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRF9640	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	TO-220AB	200 V	-55 °C	150 °C	44 nC	500 mOhm	TO-220-3	125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640STRR	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640SPBF	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640PBF	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	TO-220AB	200 V	-55 °C	150 °C	44 nC	500 mOhm	TO-220-3	125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640LPBF	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	I2PAK	200 V	-55 °C	150 °C	44 nC	500 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640STRRPBF	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	MOSFET (Metal Oxide)	11 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRF9640 Series

P-Channel 200 V 11A (Tc) 3W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources

No documents available