IRF9640 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET P-CH 200V 11A TO220AB

Part	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRF9640	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	TO-220AB	200 V	-55 °C	150 °C	44 nC	500 mOhm	TO-220-3	125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640STRR	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640SPBF	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640PBF	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	TO-220AB	200 V	-55 °C	150 °C	44 nC	500 mOhm	TO-220-3	125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640LPBF	4 V	P-Channel	1200 pF	20 V	Through Hole	10 V	I2PAK	200 V	-55 °C	150 °C	44 nC	500 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	3 W 125 W	MOSFET (Metal Oxide)	11 A
Vishay General Semiconductor - Diodes Division IRF9640STRRPBF	4 V	P-Channel	1200 pF	20 V	Surface Mount	10 V	TO-263 (D2PAK)	200 V	-55 °C	150 °C	44 nC	500 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	MOSFET (Metal Oxide)	11 A