Specification	NVTYS007N04CLTWG

Current - Continuous Drain (Id) @ 25°C	16 A, 54 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	38 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.3 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NVTYS007N04CL Series

MOSFET – Power, Single, N-Channel

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Qualification	Grade
ON Semiconductor NVTYS007N04CLTWG	4.5 V 10 V	-55 °C	175 ░C	40 V	N-Channel	20 V	16 A 54 A	8-LFPAK56 SOT-1205	Surface Mount	16 nC	2.2 V	8-LFPAK	900 pF	MOSFET (Metal Oxide)	7.3 mOhm	3.1 W 38 W	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 7.3 mΩ, 54 A

Technical documentation and resources