MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 4.5 V 10 V | -55 °C | 175 ░C | 40 V | N-Channel | 20 V | 16 A 54 A | 8-LFPAK56 SOT-1205 | Surface Mount | 16 nC | 2.2 V | 8-LFPAK | 900 pF | MOSFET (Metal Oxide) | 7.3 mOhm | 3.1 W 38 W | AEC-Q101 | Automotive |