Discrete Semiconductor Products
STP80N1K1K6
ActiveSTMicroelectronics
N-CHANNEL 800 V, 1.0 OHM TYP., 5 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE
Discrete Semiconductor Products
STP80N1K1K6
ActiveSTMicroelectronics
N-CHANNEL 800 V, 1.0 OHM TYP., 5 A MDMESH K6 POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP80N1K1K6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 62 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.1 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP80N1K1K6 Series
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources