Specification	NTHL1000N170M1

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	1700 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	48 W
Rds On (Max) @ Id, Vgs	1.43 Ohm
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NTHL1000N170M1 Series

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NTHL1000N170M1	150 pF	TO-247-3	14 nC	1700 V	SiC (Silicon Carbide Junction Transistor)	TO-247-3	1.43 Ohm	48 W	Through Hole	4.2 A	4.3 V	N-Channel	-55 °C	175 ░C	-15 V	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.49
		10	$ 3.67
		100	$ 2.62
		500	$ 2.18
		1000	$ 2.06
Newark	Each	1	$ 4.80
		10	$ 3.86
		25	$ 3.69
		50	$ 3.52
		100	$ 3.21
		250	$ 2.90

Description

General part information

NTHL1000N170M1 Series

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.