NTHL1000N170M1 Series

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NTHL1000N170M1	150 pF	TO-247-3	14 nC	1700 V	SiC (Silicon Carbide Junction Transistor)	TO-247-3	1.43 Ohm	48 W	Through Hole	4.2 A	4.3 V	N-Channel	-55 °C	175 ░C	-15 V	25 V

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Key Features

• 18V to 20V Gate Drive

• New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses

• 100% Avalanche Tested

Description

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.