STD80N340K6
ActiveN-CHANNEL 800 V, 285 MOHM TYP., 12 A MDMESH K6 POWER MOSFET IN A DPAK PACKAGE
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STD80N340K6
ActiveN-CHANNEL 800 V, 285 MOHM TYP., 12 A MDMESH K6 POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD80N340K6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 92 W |
| Rds On (Max) @ Id, Vgs | 340 mOhm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2422 | $ 4.34 | |
Description
General part information
STD80N340K6 Series
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources