Discrete Semiconductor Products

STW8NK80Z

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STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM, 6.2 A, TO-247 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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DocumentsSTW8NK80Z | Datasheet +12

Discrete Semiconductor Products

STW8NK80Z

Active

STMicroelectronics

N-CHANNEL 800 V, 1.3 OHM, 6.2 A, TO-247 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

DocumentsSTW8NK80Z | Datasheet +12

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW8NK80Z

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STW8NK80Z Series

N-channel 800 V, 1.3 Ohm, 6.2 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET

Part	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type
STMicroelectronics STW8NK80Z	Through Hole	4.5 V	10 V	800 V	46 nC	140 W	TO-247-3	6.2 A	150 °C	-55 °C	1.5 Ohm	TO-247-3	30 V	MOSFET (Metal Oxide)	1320 pF	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	584	$ 2.52

Description

General part information

STW8NK80Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.