Zenode.ai Logo
Beta
6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA910PZ

Active
ON Semiconductor

TRANS MOSFET P-CH 20V 9.4A 6-PIN MICROFET EP T/R

Deep-Dive with AI

Search across all available documentation for this part.

6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA910PZ

Active
ON Semiconductor

TRANS MOSFET P-CH 20V 9.4A 6-PIN MICROFET EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA910PZ
Current - Continuous Drain (Id) @ 25°C9.4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds2805 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.77
100$ 0.60
500$ 0.51
1000$ 0.41
Digi-Reel® 1$ 0.94
10$ 0.77
100$ 0.60
500$ 0.51
1000$ 0.41
Tape & Reel (TR) 3000$ 0.39
6000$ 0.37
9000$ 0.35
NewarkEach (Supplied on Full Reel) 3000$ 0.47
6000$ 0.42
12000$ 0.38
18000$ 0.37
30000$ 0.36
ON SemiconductorN/A 1$ 0.19

Description

General part information

FDMA910PZ Series

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.