Discrete Semiconductor Products

SIDR668DP-T1-GE3

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MOSFET N-CH 100V 23.2A/95A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 23.2A/95A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR668DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	23.2 A, 95 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Input Capacitance (Ciss) (Max) @ Vds	5400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SIDR668DP-T1-GE3	4.8 mOhm	3.4 V	20 V	108 nC	100 V	-55 °C	150 °C	PowerPAK® SO-8DC	N-Channel	23.2 A 95 A	MOSFET (Metal Oxide)	Surface Mount	5400 pF	6.25 W 125 W	PowerPAK® SO-8	10 V	7.5 V

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General part information

N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources